Course Content and Outcomes Guides (CCOG)

CCOG for EET 221 archive revision 202304

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Effective Term:
Fall 2023 through Summer 2024

Course Number:
EET 221
Course Title:
Semiconductor Devices and Circuits
Credit Hours:
5
Lecture Hours:
40
Lecture/Lab Hours:
0
Lab Hours:
30

Course Description

Introduction to semiconductor devices. Characteristics and biasing of diodes and transistors. Design and analysis of circuits using diodes, bipolar transistors, and field effect transistors. Application of transistors as amplifiers and switches. A 3-hour per week laboratory includes the application of computer tools in circuit design, evaluation, and analysis. Audit available.

Addendum to Course Description

In addition to introducing the basic theoretical principles of operation of diodes and transistors, the operational characteristics of the devices will be studied, and measured using curve tracers, simulation, and computer data acquisition methods. This term emphasizes diode and transistor biasing circuits, and basic transistor amplifier circuits.
 

Intended Outcomes for the course

Upon completion of the course students should be able to:

  1. Analyze circuits using semiconductor device fundamentals.
  2. Use computer tools in circuit evaluation and analysis.
  3. Evaluate electronics projects using semiconductor device fundamentals.
  4. Write technical project reports.

Outcome Assessment Strategies

Assessment methods are to be determined by the instructor. Typically, in class exams and quizzes, and homework assignments will be used. Lab work is typically assessed by a lab notebook, formal lab reports, performance of experiments, and possibly a lab exam

Course Content (Themes, Concepts, Issues and Skills)

1.      Semiconductor materials, PN, NPN, and PNP junctions. Simplified description of the operation of       diodes and transistors. Diode and transistor characteristic curves. The diode equation. Testing       diodes and transistors.

2.   Diode applications as rectifiers, zeners, limiters, clampers, switching, and logic. Light emitting       diodes, variable capacitance diodes.

3.   Bipolar junction transistors. Common base, common emitter, and common collector       characteristics and biasing circuits. Bias design for BJT's. Bias stabilization using collector and       emitter feedback, and voltage dividers. Transistor specifications. The transistor as a switch.

4.   Bipolar junction transistor amplifiers. AC and DC amplifier gain, input and output impedance, and       effect of source and load resistance. Brief treatment of h parameters.

5.   Load line analysis of transistor amplifiers.

6.   Field effect transistors (FET's). Junction FET characteristics and biasing. Fixed bias, self bias,       and voltage divider bias. Graphical and algebraic bias solutions. Junction FET specifications.

7.   Metal oxide semi-conductor FET's (MOS-FET's). Enhancement and depletion type MOS-FET       characteristics and biasing. Fixed bias, self bias, voltage divider bias and feedback bias.       Graphical and algebraic bias solutions. MOS- FET specifications.